smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter features high voltage: v ceo =-400v high speed:tr 0.7s absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -400 v collector to emitter voltage v ceo -400 v emitter to base voltage v ebo -7 v collector current (dc) i c -2 a collector current (pulse) *1 i c -4 a total power dissipation (ta=25 )*2 p t 2 w junction tmeperature t j 150 storage temperature t stg -55 to 150 *1 pw 10ms,duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm 2 x0.7mm sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors 2SA1412-Z product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =-400v,i e =0 -10 a emitter cutoff current i ebo v eb =-5v,i c =0 -10 a v ce =-5v,i c =-0.1a 40 60 120 v ce =-5v,i c =-1.0a 10 22 collector saturation voltage * v ce(sat) i c =-0.5a,i b =-0.1a -0.25 -0.5 v base saturation voltage * v be(sat) i c =-0.5ma,i b =-0.1ma -0.85 -1.2 v gain bandwidth product ft vce=-10v,ie=-100ma 40 mhz output capacitance c ob vcb=-10v,ie=0,f=1.0mhz 30 pf turn-on time t on i c =-1a,r l =150 0.03 0.5 storage time t stg i b1 =-i b2 =-0.2a,v cc =-150v 1.4 2 fall time t f 0.1 0.7 *pw 350s,duty cycle 2% dc current gain* h fe s h fe classification marking l k hfe 40to80 60to120 2SA1412-Z sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
|
